Model for spin-polarized transport in perovskite manganite bicrystal grain boundaries

Article

关键词: COLOSSAL MAGNETORESISTANCE MANGANITES;    HALF-METALLIC FERROMAGNET;    THIN-FILMS;    SINGLE-CRYSTAL;    LA0.7SR0.3MNO3;    DEPENDENCE;    VOLTAGE;   

DOI  :  10.1103/PhysRevB.66.024404

来源: SCIE

【 摘 要 】

We have studied the temperature dependence of low-field magnetoresistance and current-voltage characteristics of a low-angle bicrystal grain boundary junction in perovskite manganite La2/3Sr1/3MnO3 thin film. By gradually trimming the junction we have been able to reveal the nonlinear behavior of the latter. With the use of the relation M(GB)proportional toM(bulk)MR(*) we have extracted the grain-boundary magnetization. Further, we demonstrate that the built-in potential barrier of the grain boundary can be modeled by V(bi)proportional toM(bulk)(2)-M-GB(2). Thus our model connects the magnetoresistance with the potential barrier at the grain-boundary region. The results indicate that the band-bending at the grain-boundary interface has a magnetic origin.

【 授权许可】

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