Integral quantum Hall effect in graphene: Zero and finite Hall field

Article

关键词: ELECTRONIC-PROPERTIES;    VOLTAGE;   

DOI  :  10.1103/PhysRevB.83.075427

来源: SCIE

【 摘 要 】

We study the influence of a finite Hall field E-H on the Hall conductivity sigma(yx) in graphene. Analytical expressions are derived for sigma(yx) using the Kubo-Greenwood formula. For vanishing E-H, we obtain the well-known expression sigma(yx) = 4(N + 1/2)e(2)/h. The inclusion of the dispersion of the energy levels, previously not considered, and their width, due to scattering by impurities, produces the plateau of the n = 0 Landau level. Further, we evaluate the longitudinal resistivity rho(xx) and show that it exhibits an oscillatory behavior with the electron concentration. The peak values of rho(xx) depend strongly on the impurity concentration and their potential. For a finite E-H, the result for sigma(yx) is the same as that for E-H = 0, provided E-H is not strong, but the values and positions of the resistivity maxima are modified due to the E-H - dependent dispersion of the energy levels.

【 授权许可】

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