Transport through side-coupled multilevel double quantum dots in the Kondo regime

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DOI  :  10.1103/PhysRevB.89.115110

来源: SCIE

【 摘 要 】

We analyze the transport properties of a double quantum dot device in the side-coupled configuration. A small quantum dot (QD), having a single relevant electronic level, is coupled to source and drain electrodes. A larger QD, whose multilevel nature is considered, is tunnel-coupled to the small QD. A Fermi-liquid analysis shows that the low-temperature conductance of the device is determined by the total electronic occupation of the double QD. When the small dot is in the Kondo regime, an even number of electrons in the large dot leads to a conductance that reaches the unitary limit, while for an odd number of electrons a two-stage Kondo effect is observed and the conductance is strongly suppressed. The Kondo temperature of the second-stage Kondo effect is strongly affected by the multilevel structure of the large QD. For increasing level spacing, a crossover from a large Kondo temperature regime to a small Kondo temperature regime is obtained when the level spacing becomes of the order of the large Kondo temperature.

【 授权许可】

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