Characterizing featureless Mott insulating state by quasiparticle interference: A dynamical mean field theory view

Article

关键词: ELECTRONIC-STRUCTURE;    TRANSITION;    SUPERCONDUCTIVITY;    SYSTEMS;    MODEL;    SPIN;   

DOI  :  10.1103/PhysRevB.92.241102

来源: SCIE

【 摘 要 】

The quasiparticle interferences (QPIs) of the featureless Mott insulators are investigated by a T-matrix formalism implemented with the dynamical mean field theory (T-DMFT). In the Mott insulating state, due to the singularity at zero frequency in the real part of the electron self-energy [Re Sigma(omega) similar to eta/omega] predicted by DMFT, where eta can be considered as the order parameter for the Mott insulating state, QPIs are completely washed out at small bias voltages. However, a further analysis shows that Re Sigma(omega) serves as an energy-dependent chemical potential shift. As a result, the effective bias voltage seen by the system is eV' = eV - Re Sigma(eV), which leads to a critical bias voltage eV(c) similar to root eta. satisfying eV' = 0 if and only if eta is nonzero. Consequently, the same QPI patterns produced by the noninteracting Fermi surfaces appear at this critical bias voltage eV(c) in the Mott insulating state. We propose that this reentry of noninteracting QPI patterns at eV(c) could serve as an experimental signature of the Mott insulating state, and the order parameter can be experimentally measured as eta similar to (eV(c))(2).

【 授权许可】

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