Experimental doping dependence of the lattice parameter in n-type Ge: Identifying the correct theoretical framework by comparison with Si

Article

关键词: X-RAY-DIFFRACTION;    TRANSMISSION ELECTRON-MICROSCOPY;    DOPED SILICON;    SINGLE-CRYSTALS;    BORON;    GERMANIUM;    STRAIN;    ALLOYS;    SEMICONDUCTORS;    COMPRESSION;   

DOI  :  10.1103/PhysRevB.93.041201

来源: SCIE

【 摘 要 】

The lattice parameter of Ge films doped with phosphorus, arsenic, and antimony was measured as a function of the dopant concentration. When the observed trends are compared with similar measurements in doped Si, a clear pattern emerges in support of the Cargill-Keyes theory that computes the doping dependence of the lattice parameter as the sum of a purely electronic contribution, proportional to the absolute deformation potential for the states occupied by the dopant carriers, plus a sizemismatch contribution that depends on the universal topological rigidity parameter for Si-Ge systems. It is shown that when considered from the same global perspective, ab initio calculations of the structural effects of doping are in remarkable agreement with the Cargill-Keyes theory.

【 授权许可】

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