Onset of exciton-exciton annihilation in single-layer black phosphorus | |
Article | |
关键词: FIELD-EFFECT TRANSISTORS; SEMICONDUCTOR; DEPENDENCE; DYNAMICS; MOBILITY; MOS2; WS2; | |
DOI : 10.1103/PhysRevB.94.075425 | |
来源: SCIE |
【 摘 要 】
The exciton dynamics in monolayer black phosphorus is investigated over a very wide range of photoexcited exciton densities using time resolved photoluminescence. At low excitation densities, the exciton dynamics is successfully described in terms of a double exponential decay. With increasing exciton population, a fast, nonexponential component develops as exciton-exciton annihilation takes over as the dominant recombination mechanism under high excitation conditions. Our results identify an upper limit for the injection density, after which exciton-exciton annihilation reduces the quantum yield, which will significantly impact the performance of light emitting devices based on single-layer black phosphorus.
【 授权许可】
Free