Onset of exciton-exciton annihilation in single-layer black phosphorus

Article

关键词: FIELD-EFFECT TRANSISTORS;    SEMICONDUCTOR;    DEPENDENCE;    DYNAMICS;    MOBILITY;    MOS2;    WS2;   

DOI  :  10.1103/PhysRevB.94.075425

来源: SCIE

【 摘 要 】

The exciton dynamics in monolayer black phosphorus is investigated over a very wide range of photoexcited exciton densities using time resolved photoluminescence. At low excitation densities, the exciton dynamics is successfully described in terms of a double exponential decay. With increasing exciton population, a fast, nonexponential component develops as exciton-exciton annihilation takes over as the dominant recombination mechanism under high excitation conditions. Our results identify an upper limit for the injection density, after which exciton-exciton annihilation reduces the quantum yield, which will significantly impact the performance of light emitting devices based on single-layer black phosphorus.

【 授权许可】

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