Tricritical behavior of the two-dimensional intrinsically ferromagnetic semiconductor CrGeTe3

Article

关键词: EQUATION-OF-STATE;    NANOSHEETS;    COMPOUND;    CRSITE3;    GAS;   

DOI  :  10.1103/PhysRevB.95.245212

来源: SCIE

【 摘 要 】

CrGeTe3 recently emerges as a new two-dimensional (2D) ferromagnetic semiconductor that is promising for spintronic device applications. Unlike CrSiTe3 whose magnetism can be understood using the 2D-Ising model, CrGeTe3 exhibits a smaller van der Waals gap and larger cleavage energy, which could lead to a transition of magnetic mechanism from 2D to 3D. To confirm this speculation, we investigate the critical behavior of CrGeTe3 around the second-order paramagnetic-ferromagnetic phase transition. We obtain the critical exponents estimated by several common experimental techniques including the modified Arrott plot, Kouvel-Fishermethod, and critical isotherm analysis, which show that themagnetism of CrGeTe3 follows the tricritical mean-field model with the critical exponents beta,gamma and delta of 0.240 +/- 0.006, 1.000 +/- 0.005, and 5.070 +/- 0.006, respectively, at the Curie temperature of 67.9 K. We therefore suggest that the magnetic phase transition from 2D to 3D for CrGeTe3 should locate near a tricritical point. Our experiment provides a direct demonstration of the applicability of the tricritical mean-field model to a 2D ferromagnetic semiconductor.

【 授权许可】

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