Type-II quantum-dot-in-nanowire structures with large oscillator strength for optical quantum gate applications

Article

关键词: INFORMATION;    EXCITONS;    WELLS;    DYNAMICS;    ENERGY;   

DOI  :  10.1103/PhysRevB.96.125408

来源: SCIE

【 摘 要 】

We present a numerical investigation of the exciton energy and oscillator strength in type-II nanowire quantum dots. For a single quantum dot, the poor overlap of the electron part and the weakly confined hole part of the excitonic wave function leads to a low oscillator strength compared to type-I systems. To increase the oscillator strength, we propose a double quantum dot structure featuring a strongly localized excitonwave function and a corresponding fourfold relative enhancement of the oscillator strength, paving theway towards efficient optically controlled quantum gate applications in the type-II nanowire system. The simulations are performed using a computationally efficient configuration-interaction method suitable for handling the relatively large nanowire structures.

【 授权许可】

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