Role of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductors

Article

关键词: FIELD-EFFECT TRANSISTORS;    THIN-FILM TRANSISTORS;    HOPPING CONDUCTIVITY;    DISORDERED-SYSTEMS;    HIGH-PERFORMANCE;    DERIVATIVES;    MODEL;   

DOI  :  10.1103/PhysRevB.96.125202

来源: SCIE

【 摘 要 】

We demonstrate that the degree of charge delocalization has a strong impact on polarization energy and thereby on the position of the transport band edge in organic semiconductors. This gives rise to long-range potential fluctuations, which govern the electronic transport through delocalized states in organic crystalline layers. This concept is employed to formulate an analytic model that explains a negative field dependence coupled with a positive temperature dependence of the charge mobility observed by a lateral time-of-flight technique in a high-mobility crystalline organic layer. This has important implications for the further understanding of the charge transport via delocalized states in organic semiconductors.

【 授权许可】

Free