Gate-tunable electronic transport in p-type GaSb quantum wells

Article

关键词: PAULI SPIN BLOCKADE;    COMPOUND SEMICONDUCTORS;    HOLE MOBILITY;    INAS;    HYBRIDIZATION;    ACCUMULATION;    ANTIMONIDE;   

DOI  :  10.1103/PhysRevB.99.115435

来源: SCIE

【 摘 要 】

We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gatetunable devices. Measurements probing the valence band structure of GaSb unveil a significant spin splitting of the ground subband induced by spin-orbit coupling. We characterize the carrier densities, effective masses, and quantum scattering times of these spin-split subbands and find that the results are in agreement with band structure calculations. Additionally, we study the weak antilocalization correction to the conductivity present around zero magnetic field and obtain information on the phase coherence. These results establish GaSb quantum wells as a platform for two-dimensional hole physics and lay the foundations for future experiments in this system.

【 授权许可】

Free