Surface electronic structure of metastable FeSi(CsCl)(111) epitaxially grown on Si(111)

Article

关键词: PHOTOELECTRON SPECTROSCOPIES;    IRON SILICIDES;    REAL-SPACE;    SEMICONDUCTORS;    SYSTEMS;    FILMS;   

DOI  :  10.1103/PhysRevB.55.R16065

来源: SCIE

【 摘 要 】

We report an investigation on the electronic structure of metastable, epitaxial FeSi films grown on Si(111). The electronic structure of the metastable silicides was probed with angle-resolved photoemission, and com-pared with theoretical calculations. We identify the silicide as FeSi crystallizing in the CsCl structure. Its surface is Fe terminated, and presents a prominent, strongly dispersing surface state at a binding energy of -3.5 eV in <(Gamma)over bar>. Its origin lies in the truncation of Fe bonds at the surface, and thus it has a major Fe d(z)2 content.

【 授权许可】

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