Macroscopic polarization and band offsets at nitride heterojunctions

Article

关键词: RAY PHOTOEMISSION SPECTROSCOPY;    GAN;    INTERFACES;    ALN;    INN;   

DOI  :  10.1103/PhysRevB.57.R9427

来源: SCIE

【 摘 要 】

Ab initio electronic structure studies of prototypical polar interfaces of wurtzite m-V nitrides show that large uniform electric fields exist in epitaxial nitride overlayers, due to the discontinuity across the interface of the macroscopic polarization of the constituent materials. Polarization fields require a nonstandard evaluation of band offsets and formation energies: we find a large strain-induced asymmetry of the offset [0.2 eV for AlN/GaN (0001), 0.85 eV for GaN/AlN (0001)], and tiny interface formation energies. [S0163-1829(98)52116-9].

【 授权许可】

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