Localization-enhanced biexciton binding in semiconductors

Article

关键词: NONLINEAR-OPTICAL-PROPERTIES;    GAAS QUANTUM-WELLS;    EXCITONIC MOLECULE;    ENERGY;    DOTS;    PHOTOLUMINESCENCE;    ALXGA1-XAS;    WIRES;   

DOI  :  10.1103/PhysRevB.59.15405

来源: SCIE

【 摘 要 】

The influence of excitonic localization on the binding energy of biexcitons is investigated for quasi-three-dimensional and quasi-two-dimensional AlxGa1-xAs structures. An increase of the biexciton binding energy is observed for localization energies comparable to or larger than the free biexciton binding energy. A simple analytical model for localization in the weak confinement regime ascribes the increase to a quenching of the additional kinetic energy of the exciton-exciton motion in the biexciton.

【 授权许可】

Free