Resonant inelastic x-ray scattering study of the electronic structure of Cu2O

Article

关键词: NEAR-EDGE STRUCTURE;    ABSORPTION SPECTRA;    OPTICAL-PROPERTIES;    ENERGY-BANDS;    CUO;    CUPRITE;    COPPER;    OXIDE;   

DOI  :  10.1103/PhysRevB.81.195202

来源: SCIE

【 摘 要 】

A resonant inelastic x-ray scattering study of the electronic structure of the semiconductor cuprous oxide, Cu2O, is reported. When the incident x-ray energy is tuned to the Cu K-absorption edge, large enhancements of the spectral features corresponding to the electronic transitions between the valence band and the conduction band are observed. A feature at 6.5 eV can be well described by an interband transition from occupied states of mostly Cu 3d character to unoccupied states with mixed 3d, 4s, and O 2p character. In addition, an insulating band gap is observed, and the momentum dependence of the lower bound is measured along the Gamma-R direction. This is found to be in good agreement with the valence-band dispersion measured with angle-resolved photoemission spectroscopy.

【 授权许可】

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