Effect of strain on the orbital and magnetic ordering of manganite thin films and their interface with an insulator

Article

关键词: COLOSSAL MAGNETORESISTANCE;    TUNNEL-JUNCTIONS;    DOUBLE-EXCHANGE;    PHASE-DIAGRAM;    RECONSTRUCTION;    SUPERLATTICES;    PHYSICS;    OXIDES;   

DOI  :  10.1103/PhysRevB.83.064424

来源: SCIE

【 摘 要 】

We study the effect of uniform uniaxial strain on the ground-state electronic configuration of a thin-film manganite. Our model Hamiltonian includes the double exchange, the Jahn-Teller electron-lattice coupling, and the antiferromagnetic superexchange. The strain arises due to the lattice mismatch between an insulating substrate and a manganite, which produces a tetragonal distortion. This is included in the model via a modification of the hopping amplitude and the introduction of an energy splitting between the Mn e(g) levels. We analyze the bulk properties of half-doped manganites and the electronic reconstruction at the interface between a ferromagnetic and metallic manganite and the insulating substrate. The strain drives an orbital selection modifying the electronic properties and the magnetic ordering of manganites and their interfaces.

【 授权许可】

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