Tunneling of electrons between Si nanocrystals embedded in a SiO2 matrix

Article

关键词: SILICON NANOCRYSTALS;    PHOTOLUMINESCENCE;    NANOSTRUCTURES;    EFFICIENCY;    TRANSPORT;   

DOI  :  10.1103/PhysRevB.86.075312

来源: SCIE

【 摘 要 】

Based on ab initio density functional calculations of Si nanocrystals (NCs) in a SiO2 matrix we study the impact of NC size and separation on electronic properties and present consequences for inter-NC carrier transport. The NC size and separation significantly influence the electronic structure of three-dimensional superlattice systems with different NC filling. The energy levels for large NC distances are broadened to minibands for small separations due to the wave-function overlap. Their formation is described in terms of inter-NC hopping and carrier tunneling. We find that electron transport in conduction minibands is more likely than hole transport.

【 授权许可】

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