Topological surface transport in epitaxial SnTe thin films grown on Bi2Te3

Article

关键词: CRYSTALLINE INSULATOR;    EXPERIMENTAL REALIZATION;    CARRIER-CONCENTRATION;    QUANTUM OSCILLATIONS;    PHASE-TRANSITION;    STATES;   

DOI  :  10.1103/PhysRevB.89.121302

来源: SCIE

【 摘 要 】

The topological crystalline insulator SnTe has been grown epitaxially on a Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov-de Haas oscillation data suggest that the n-type carriers are Dirac fermions residing on the SnTe (111) surface. This transport observation of the topological surface state in a p-type topological crystalline insulator became possible due to a downward band bending on the free SnTe surface, which appears to be of intrinsic origin.

【 授权许可】

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