Crystalline and electronic structure of single-layer TaS2

Article

关键词: CHARGE-DENSITY-WAVE;    TOTAL-ENERGY CALCULATIONS;    TRANSITION;    SUPERCONDUCTIVITY;    DYNAMICS;    ORDER;    MOS2;   

DOI  :  10.1103/PhysRevB.94.081404

来源: SCIE

【 摘 要 】

Single-layer TaS2 is epitaxially grown on Au(111) substrates. The resulting two-dimensional crystals adopt the 1H polymorph. The electronic structure is determined by angle-resolved photoemission spectroscopy and found to be in excellent agreement with density functional theory calculations. The single-layer TaS2 is found to be strongly n doped, with a carrier concentration of 0.3(1) extra electrons per unit cell. No superconducting or charge density wave state is observed by scanning tunneling microscopy at temperatures down to 4.7 K.

【 授权许可】

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