Kinetic path towards the passivation of threading dislocations in GaN by oxygen impurities

Article

关键词: DEFECTS;    EDGE;    PERFORMANCE;    DIFFUSION;    EPITAXY;    FILMS;   

DOI  :  10.1103/PhysRevB.95.121201

来源: SCIE

【 摘 要 】

Defect tolerance can be critically important for optoelectronics. GaN, specifically, tolerates a relatively large concentration of threading dislocations, but the physical origin of this tolerance remains a mystery. First-principles calculations reveal the removal of deep-level states from edge dislocations by oxygen passivation. This removal is, however, not a thermodynamic ground state but kinetically driven. Oxygen incorporation during growth can be harmful; it becomes beneficial if introduced in the cooling-down phase or post-growth thermal treatment at a significantly lower temperature. Our findings extend first-principles defect study to the nonequilibrium regime where low-diffusion-barrier defects affect electronic behavior of semiconductors in unexpected fashion.

【 授权许可】

Free