Large enhancement of the spin Hall effect in Au by side-jump scattering on Ta impurities | |
Article | |
关键词: MAGNETORESISTANCE; SEMICONDUCTORS; | |
DOI : 10.1103/PhysRevB.96.140405 | |
来源: SCIE |
【 摘 要 】
We present measurements of the spin Hall effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and ferromagnetic-resonance/spin-pumping techniques. The main result is the identification of a large enhancement of the spin Hall angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as +0.5 (i.e., 50%) for about 10% of Ta. In contrast, the SHA in AuW does not exceed +0.15 and can be explained by intrinsic SHE of the alloy without significant extrinsic contribution from skew or side-jump scattering by W impurities. The AuTa alloys, as they combine a very large SHA with a moderate resistivity (smaller than 85 mu Omega cm), are promising for spintronic devices exploiting the SHE.
【 授权许可】
Free