Large enhancement of the spin Hall effect in Au by side-jump scattering on Ta impurities

Article

关键词: MAGNETORESISTANCE;    SEMICONDUCTORS;   

DOI  :  10.1103/PhysRevB.96.140405

来源: SCIE

【 摘 要 】

We present measurements of the spin Hall effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and ferromagnetic-resonance/spin-pumping techniques. The main result is the identification of a large enhancement of the spin Hall angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as +0.5 (i.e., 50%) for about 10% of Ta. In contrast, the SHA in AuW does not exceed +0.15 and can be explained by intrinsic SHE of the alloy without significant extrinsic contribution from skew or side-jump scattering by W impurities. The AuTa alloys, as they combine a very large SHA with a moderate resistivity (smaller than 85 mu Omega cm), are promising for spintronic devices exploiting the SHE.

【 授权许可】

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