Epitaxial strain modulated electronic properties of interface controlled nickelate superlattices

Article

关键词: METAL-INSULATOR-TRANSITION;    BAND-GAP;    PEROVSKITES;    HOLES;    DRIVEN;    FILMS;   

DOI  :  10.1103/PhysRevB.98.045115

来源: SCIE

【 摘 要 】

Perovskite nickelate heterostructures consisting of single unit cells of EuNiO3 and LaNiO3 have been grown on a set of single crystalline substrates by pulsed laser interval deposition to investigate the effect of epitaxial strain on electronic and magnetic properties at the extreme interface limit. Despite the variation of substrate in-plane lattice constants and lattice symmetry, the structural response to heterostructuring is primarily controlled by the presence of the EuNiO3 layer. In sharp contrast to bulk LaNiO3 or EuNiO3, the superlattices grown under tensile strains exhibit metal-to-insulator transitions (MIT) below room temperature. The onset of magnetic and electronic transitions associated with the MIT can be further separated by application of large tensile strain. Furthermore, these transitions can be entirely suppressed by very small compressive strain. X-ray resonant absorption spectroscopy measurements reveal that such strain-controlled MIT is directly linked to a strain-induced self-doping effect without any chemical doping.

【 授权许可】

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