Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices

Article

关键词: ELECTRICAL DETECTION;    TRANSPORT;    SEMICONDUCTORS;   

DOI  :  10.1103/PhysRevB.100.024431

来源: SCIE

【 摘 要 】

We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias voltage applied between two FM/SC Schottky tunnel contacts, the local spin accumulation signal can show nonmonotonic variations, including a sign inversion. A part of the nonmonotonic features can be understood qualitatively by considering the rapid reduction in the spin polarization of the FM/SC interfaces with increasing bias voltage. In addition to the sign inversion of the FM/SC interface spin polarization, the influence of the spin-drift effect in the SC layer and the nonlinear electrical spin conversion at a biased FM/SC contact are discussed.

【 授权许可】

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