Carrier-carrier scattering in the gain dynamics of InxGa1-xAs/AlyGa1-yAs diode lasers

Article

关键词: ELECTRON-ELECTRON SCATTERING;    INGAASP OPTICAL AMPLIFIERS;    COMPRESSION;    SATURATION;   

DOI  :  10.1103/PhysRevB.54.8005

来源: SCIE

【 摘 要 】

Ultrafast optical nonlinearities in semiconductors play a central role in determining transient amplification and pulse-dependent gain saturation in diode lasers. Both carrier-phonon and carrier-carrier scattering are expected to determine the gain dynamics in these systems. We present a relaxation-time approximation model for carrier-carrier scattering in strained-layer lasers. The carrier-carrier scattering rates are determined using the quasiequilibrium distribution functions for a given background carrier density. The distribution function to which the photoexcited distribution relaxes is a Fermi-Dirac function where the chemical potential and temperature are self-consistently chosen so that both particle number and energy are conserved in the carrier-carrier scattering process. The relaxation approximation makes the problem an effective one-dimensional problem which can then be solved directly for the carrier distributions using an adaptive Runge-Kutta routine. This procedure is less computationally intensive than a full Monte Carlo simulation. The results show that the inclusion of carrier-carrier scattering improves previous results where only carrier-phonon scattering was included and that carrier-carrier scattering is necessary to produce heating of the carriers in the high-energy tails.

【 授权许可】

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