Raman scattering by LO phonon-plasmon coupled modes in n-type InP

Article

关键词: P-TYPE GAAS;    CARRIER CONCENTRATION;    CONDUCTION-BAND;    GALLIUM NITRIDE;    SPECTRA;    PHOTOLUMINESCENCE;    NONPARABOLICITY;    CRYSTALS;    GAP;   

DOI  :  10.1103/PhysRevB.60.5456

来源: SCIE

【 摘 要 】

We have studied LO phonon-plasmon coupled modes by means of Raman scattering in n-InP for carrier densities between 6x10(16) and 1x10(19) cm(-3). A line-shape theory based on the Lindhard-Mermin dielectric function that takes into account the nonparabolicity of the InP conduction band as well as temperature and finite wave-vector effects is used to fit the Raman spectra and extract accurate values of the electron density. The results obtained from the Lindhard-Mermin model are compared with the charge density determinations based on the Drude and the hydrodynamical models, and the approximations involved in these models are discussed. [S0163-1829(99)10431-4].

【 授权许可】

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