Raman scattering by LO phonon-plasmon coupled modes in n-type InP | |
Article | |
关键词: P-TYPE GAAS; CARRIER CONCENTRATION; CONDUCTION-BAND; GALLIUM NITRIDE; SPECTRA; PHOTOLUMINESCENCE; NONPARABOLICITY; CRYSTALS; GAP; | |
DOI : 10.1103/PhysRevB.60.5456 | |
来源: SCIE |
【 摘 要 】
We have studied LO phonon-plasmon coupled modes by means of Raman scattering in n-InP for carrier densities between 6x10(16) and 1x10(19) cm(-3). A line-shape theory based on the Lindhard-Mermin dielectric function that takes into account the nonparabolicity of the InP conduction band as well as temperature and finite wave-vector effects is used to fit the Raman spectra and extract accurate values of the electron density. The results obtained from the Lindhard-Mermin model are compared with the charge density determinations based on the Drude and the hydrodynamical models, and the approximations involved in these models are discussed. [S0163-1829(99)10431-4].
【 授权许可】
Free