Excitonic lasing in semiconductor quantum wires

Article

关键词: BAND-GAP RENORMALIZATION;    POLARIZATION ANISOTROPY;    TEMPERATURE-DEPENDENCE;    RADIATIVE LIFETIMES;    OPTICAL-ABSORPTION;    WELL WIRES;    SPECTRA;    CONFINEMENT;    EMISSION;    LASER;   

DOI  :  10.1103/PhysRevB.61.R10575

来源: SCIE

【 摘 要 】

Direct experimental evidence for excitonic lasing is obtained in optically pumped V-groove quantum wire structures. We demonstrate that laser emission at a temperature of 10 K arises from a population inversion of localized excitons within the inhomogeneously broadened luminescence line. At the lasing threshold, we estimate a maximum exciton density of about 1.8x10(5) cm(-1).

【 授权许可】

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