Hall-conductivity sign change and fluctuations in amorphous NbxGe1-x films

Article

关键词: HIGH-TEMPERATURE SUPERCONDUCTORS;    II SUPERCONDUCTORS;    RESISTIVE TRANSITION;    TRANSPORT-PROPERTIES;    ORDER-PARAMETER;    REVERSAL;    PARACONDUCTIVITY;    DYNAMICS;    FIELD;    FE;   

DOI  :  10.1103/PhysRevB.64.014507

来源: SCIE

【 摘 要 】

The sign change in the Hall conductivity has been studied in thin amorphous Nb1-xGex(x approximate to0.3) films. By changing the film thickness it is shown that the field at which the sign reversal occurs shifts to lower values (from above to below the mean-field transition field H-c2) With increasing film thickness. This effect can be understood in terms of a competition between a positive-normal and a negative-fluctuation contribution to the Hall conductivity.

【 授权许可】

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