Nanowire-induced optical anisotropy of the Si(111)-In surface

Article

关键词: ELECTRONIC-STRUCTURE CALCULATIONS;    REFLECTANCE ANISOTROPY;    PHASE-TRANSITION;    QUANTUM CHAINS;    IMAGE STATE;    INDIUM;    PSEUDOPOTENTIALS;    SILICON;    MODEL;    RECONSTRUCTION;   

DOI  :  10.1103/PhysRevB.68.035329

来源: SCIE

【 摘 要 】

Ab initio calculations of the reflectance anisotropy of Si(111)-In surfaces are presented. A very pronounced optical anisotropy around 2 eV is predicted for the structural model proposed by Bunk et al. [Phys. Rev. B 59, 12 228 (1999)] for the (4X1) reconstructed surface. The (4x2)/(8X2) reconstructed surface, induced by a slight distortion of the indium chains, is shown to result in a splitting of the 2 eV peak. The calculated results are in excellent agreement with recent polarized reflectance data acquired during the (4X1)-->(4X2)/(8 X 2) phase transition.

【 授权许可】

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