Band gaps in incommensurable graphene on hexagonal boron nitride | |
Article | |
关键词: SCANNING-TUNNELING-MICROSCOPY; AUGMENTED-WAVE METHOD; ELECTRONIC-PROPERTIES; CARBON NANOTUBES; BACK SCATTERING; DIRAC FERMIONS; HETEROSTRUCTURES; TRANSISTOR; SUBSTRATE; PROSPECTS; | |
DOI : 10.1103/PhysRevB.89.201404 | |
来源: SCIE |
【 摘 要 】
Devising ways of opening a band gap in graphene to make charge-carrier masses finite is essential for many applications. Recent experiments with graphene on hexagonal boron nitride (h-BN) offer tantalizing hints that the weak interaction with the substrate is sufficient to open a gap, in contradiction of earlier findings. Using many-body perturbation theory, we find that the small observed gap is what remains after a much larger underlying quasiparticle gap is suppressed by incommensurability. The sensitivity of this suppression to a small modulation of the distance separating graphene from the substrate suggests ways of exposing the larger underlying gap.
【 授权许可】
Free