Band gaps in incommensurable graphene on hexagonal boron nitride

Article

关键词: SCANNING-TUNNELING-MICROSCOPY;    AUGMENTED-WAVE METHOD;    ELECTRONIC-PROPERTIES;    CARBON NANOTUBES;    BACK SCATTERING;    DIRAC FERMIONS;    HETEROSTRUCTURES;    TRANSISTOR;    SUBSTRATE;    PROSPECTS;   

DOI  :  10.1103/PhysRevB.89.201404

来源: SCIE

【 摘 要 】

Devising ways of opening a band gap in graphene to make charge-carrier masses finite is essential for many applications. Recent experiments with graphene on hexagonal boron nitride (h-BN) offer tantalizing hints that the weak interaction with the substrate is sufficient to open a gap, in contradiction of earlier findings. Using many-body perturbation theory, we find that the small observed gap is what remains after a much larger underlying quasiparticle gap is suppressed by incommensurability. The sensitivity of this suppression to a small modulation of the distance separating graphene from the substrate suggests ways of exposing the larger underlying gap.

【 授权许可】

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