Probing the Fermi surface of three-dimensional Dirac semimetal Cd3As2 through the de Haas-van Alphen technique

Article

关键词: TOPOLOGICAL INSULATORS;    QUANTUM OSCILLATIONS;    PHASE;    SEMICONDUCTOR;    MOBILITY;    GRAPHENE;    SYSTEM;   

DOI  :  10.1103/PhysRevB.91.155139

来源: SCIE

【 摘 要 】

We have observed Shubnikov-de Haas and de Haas-van Alphen effects in the single crystals of the three-dimensional Dirac semimetal Cd3As2 up to 50 K, traceable at fields as low as 2 and 1 T, respectively. The values of the Fermi wave vector, the Fermi velocity, and the effective cyclotron mass of the charge carrier, calculated from both techniques, are close to each other and match well with earlier reports. However, the de Haas-van Alphen effect clearly reflects the existence of two different Fermi surface cross sections along certain directions and a nontrivial Berry's phase, which is the signature of a three-dimensional Dirac fermion in Cd3As2.

【 授权许可】

Free