Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas

Article

关键词: QUANTUM-WELLS;    ORBIT INTERACTION;    BAND PARAMETERS;    OSCILLATIONS;    HETEROSTRUCTURES;    SEMICONDUCTORS;    CONDUCTIVITY;    SPINTRONICS;    SCATTERING;    INTERFACE;   

DOI  :  10.1103/PhysRevB.93.075302

来源: SCIE

【 摘 要 】

Control of zero-field spin splitting is realized in a dual-gated high-quality InAs-AlSb two-dimensional electron gas. Magnetotransport experiments showed clean Shubnikov-de Haas oscillations down to low magnetic fields, and the gate-tuned electron mobility exceeded 700 000 cm(2)/Vs. A clear beating effect was observed in magnetoresistance oscillations at large potential asymmetry between gates. Beat patterns due to zero-field spin splitting and other classes of transverse magnetoresistance oscillations were distinguished by temperature-dependent magnetoresistance measurements. Analysis of the magnetoresistance oscillations indicated that the zero-field spin splitting could be tuned via the Rashba effect while keeping the two-dimensional electron gas charge density constant.

【 授权许可】

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