In situ hard x-ray photoemission spectroscopy of barrier-height control at metal/PMN-PT interfaces

Article

关键词: PMN-PT;    FERROELECTRICITY;    STORAGE;    PHYSICS;    STRAIN;    FILMS;   

DOI  :  10.1103/PhysRevB.93.235415

来源: SCIE

【 摘 要 】

Metal-ferroelectric interfaces form the basis of novel electronic devices. A key effect determining the device functionality is the bias-dependent change of the electronic energy-level alignment at the interface. Here, hard x-ray photoelectron spectroscopy (HAXPES) is used to determine the energy-level alignment at two metal-ferroelectric interfaces-Au versus SrRuO3 on the relaxor ferroelectric Pb(Mg1/3Nb2/3)(0.72)Ti0.28O3 (PMN-PT)-directly in situ as a function of electrical bias. The bias-dependent average shifts of the PMN-PT core levels are found to have two dominant contributions on the 0.1-1-eV energy scale: one depending on the metal electrode and the remanent electric polarization and the other correlated with electric-field-induced strain. Element-specific deviations from the average shifts are smaller than 0.1 eV and appear to be related to predicted dynamical charge variations in PMN-PT. In addition, the efficiency of ferroelectric polarization switching is shown to be reduced near the coercive field under x-ray irradiation. The results establish HAXPES as a tool for the in operando investigation of metal-ferroelectric interfaces and suggest electric-field-induced modifications of the polarization distribution as a novel way to control the barrier height at such interfaces.

【 授权许可】

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