Effective Lande factors of electrons and holes in lead chalcogenide nanocrystals

Article

关键词: EXCITON FINE-STRUCTURE;    QUANTUM;    SHAPE;    PBS;    DYNAMICS;    SEMICONDUCTORS;    SPINS;   

DOI  :  10.1103/PhysRevB.107.035414

来源: SCIE

【 摘 要 】

The Lande or g factors of charge carriers in solid state systems provide invaluable information about the re-sponse of quantum states to external magnetic fields and are key ingredients in the description of spin-dependent phenomena in nanostructures. We report on a comprehensive theoretical analysis of electron and hole g factors in lead chalcogenide nanocrystals. By combining symmetry analysis, atomistic calculations, and extended k center dot p theory, we relate calculated linear-in-magnetic field energy splittings of confined electron states in nanocrystals to the intravalley g factors of the multivalley bulk materials, renormalized due to the quantum confinement. We demonstrate that this renormalization is correctly reproduced by analytical expressions derived in the framework of the extended k center dot p model.

【 授权许可】

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