Tunable local polariton modes in semiconductors

Article

关键词: VIBRATIONAL-MODES;    DEFECTS;    RECOMBINATION;    EMISSION;    CAPTURE;    CENTERS;    STATES;    GAAS;    BAND;   

DOI  :  10.1103/PhysRevB.64.115203

来源: SCIE

【 摘 要 】

We study the local states within the polariton band gap that arise due to deep defect centers with strong electron-phonon coupling, Electron transitions involving deep levels may result in alteration of local elastic constants. In this case. substantial reversible transformations of the impurity polariton density of states occur, which include the appearance/disappearance of the polariton impurity band, and its shift and/or the modification of its shape. These changes can be induced by thermo- and photoexcitation of the localized electron states or by trapping of injected charge carriers. We develop a simple model, which is applied to the O-p center in GaP. Further possible experimental realizations of the effect are discussed.

【 授权许可】

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