Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots

Article

关键词: DETECTED MAGNETIC-RESONANCE;    ENERGY RELAXATION;    FIELD;    SUPERLATTICES;    SPECTROSCOPY;    ABSORPTION;    WELLS;    PHOTOLUMINESCENCE;    SEMICONDUCTORS;    EXCITONS;   

DOI  :  10.1103/PhysRevB.68.045329

来源: SCIE

【 摘 要 】

A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QD's) is investigated by means of optically detected microwave resonance spectroscopy. The absorption of W-band (95 GHz) microwaves is observed via the detection of changes in the total photoluminescence intensity of the InAs QD's. A strong and anisotropic signal at low fields is ascribed to cyclotron resonance of the electron in the two-dimensional wetting layer, corresponding to an effective mass of 0.053m(0). Further microwave-induced signals at higher fields are tentatively attributed to magnetic resonance transitions between spin states of the holes confined in the shallow dots.

【 授权许可】

Free