Roughness of undoped graphene and its short-range induced gauge field

Article

关键词: DIRAC FERMIONS;   

DOI  :  10.1103/PhysRevB.76.195407

来源: SCIE

【 摘 要 】

We present both numerical and analytical studies of graphene roughness with a crystal structure including 500x500 atoms. The roughness can effectively result in a random gauge field and has important consequences for its electronic structure. Our results show that its height fluctuations in small scales have a scaling behavior with a temperature dependent roughness exponent in the interval of 0.6

【 授权许可】

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