Stacking faults, bound states, and quantum Hall plateaus in crystalline graphite

Article

关键词: SCANNING-TUNNELING-MICROSCOPY;    ELECTRONIC PHASE-TRANSITION;    ORIENTED PYROLYTIC-GRAPHITE;    STRONG MAGNETIC-FIELD;    BAND-STRUCTURE;    DENSITY-WAVE;    GRAPHENE;    SURFACE;   

DOI  :  10.1103/PhysRevB.78.245416

来源: SCIE

【 摘 要 】

We analyze the electronic properties of a simple stacking defect in Bernal graphite. We show that a bound state forms, which disperses as parallel to k-K parallel to(3), in the vicinity of either of the two inequivalent zone corners K. In the presence of a strong c-axis magnetic field, this bound state develops a Landau-level structure which for low energies behaves as E(n)proportional to parallel to nB parallel to(3/2). We show that buried stacking faults have observable consequences for surface spectroscopy, and we discuss the implications for the three-dimensional quantum Hall effect (3DQHE). We also analyze the Landau-level structure and chiral surface states of rhombohedral graphite and show that, when doped, it should exhibit multiple 3DQHE plateaus at modest fields.

【 授权许可】

Free