期刊论文详细信息
Electronic transport properties of electron- and hole-doped semiconducting C1b Heusler compounds: NiTi1-xMxSn (M=Sc, V)
Article
关键词: THERMOELECTRIC PROPERTIES;    SOLID-SOLUTIONS;    EXACT EXCHANGE;    ALLOYS;    APPROXIMATION;    TI1-XSCXNISN;    NI;   
DOI  :  10.1103/PhysRevB.82.085108
来源: SCIE
【 摘 要 】

The substitutional series of Heusler compounds NiTi1-xMxSn (where M=Sc, V and 0

【 授权许可】

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