Dephasing of excitons and multiexcitons in undoped and p-doped InAs/GaAs quantum dots-in-a-well

Article

关键词: BINDING-ENERGY;    AMPLIFIERS;    EMISSION;   

DOI  :  10.1103/PhysRevB.82.195314

来源: SCIE

【 摘 要 】

We report an experimental investigation of the dephasing of excitons and multiexcitons in technologically relevant undoped and p-doped InAs/GaAs dot-in-a-well structures emitting near 1.3 mu m wavelength. Using a transient four-wave mixing technique in heterodyne detection, we measured the excitonic dephasing due to phonon coupling in the temperature range from 5 to 300 K, and the multiexcitonic dephasing at low temperature by electrically injecting carriers through a p-i-n diode structure. While the temperature-dependent excitonic dephasing is found to be similar to previous studies, the contribution from electrically injected carriers is weaker in these dot-in-a-well systems due to a reduced pure dephasing from Coulomb interaction with carriers in the barrier material. Moreover, multiexcitonic transitions contribute with a subpicosecond dephasing, corresponding to a homogeneous broadening in the meV range. In the p-doped structure, positively charged multiexcitons are formed due to the built-in hole reservoir, which show a dominating dephasing component in the subpicosecond range. However, a weaker component in the 10 ps range is observed and attributed to final states with spin-forbidden relaxation.

【 授权许可】

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