Colossal negative magnetoresistance in dilute fluorinated graphene

Article

关键词: RANGE-HOPPING REGIME;    ANDERSON INSULATORS;    LOCALIZATION;    MAGNETOCONDUCTANCE;    GRAPHITE;    STATES;   

DOI  :  10.1103/PhysRevB.83.085410

来源: SCIE

【 摘 要 】

Adatoms offer an effective route to modify and engineer the properties of graphene. In this work, we create dilute fluorinated graphene using a clean, controlled, and reversible approach. At low carrier densities, the system is strongly localized and exhibits an unexpected, colossal negative magnetoresistance. The zero-field resistance is reduced by a factor of 40 at the highest field of 9 T and shows no sign of saturation. Unusual staircaselike field dependence is observed below 5 K. The magnetoresistance is highly anisotropic. These observations cannot be explained by existing theories, but likely require adatom-induced magnetism and/or a metal-insulator transition driven by quantum interference.

【 授权许可】

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