Condition for the emergence of a bulk Fermi arc in disordered Dirac-fermion systems

Article

关键词: DEGENERATE SEMICONDUCTORS;    CRITICAL-BEHAVIOR;    SPECTRUM;    MODEL;   

DOI  :  10.1103/PhysRevB.98.085150

来源: SCIE

【 摘 要 】

We present a renormalization group analysis of the disorder effects on the low-energy behaviors of two-dimensional tilted Dirac-fermion systems, in which the fermions have two distinct orbitals unrelated by any symmetry. Four types of disordered potential, two interorbital and two intraorbital, are considered. If there is only one type of interorbital disorder, the fermion-disorder scattering induces logarithmic or power-law corrections to the fermion density of states and specific heat. In contrast, the intraorbital disorder can turn the system into a strongly disordered phase. In this disordered phase, calculations based on self-consistent Born approximation reveal that the Dirac point is destroyed and replaced by a bulk Fermi arc. We also study the interplay of four types of disorder, and find that the Dirac point can either remain intact or give place to a Fermi arc. We obtain the condition for the emergence of a Fermi arc in this case. Our results indicate that disorders can result in rich low-energy properties of tilted Dirac fermions.

【 授权许可】

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