期刊论文详细信息
The signature of chemical valence in the electrical conduction through a single-atom contact
Article
关键词: TRANSPORT-PROPERTIES;    QUANTUM TRANSPORT;    SUPERCONDUCTOR;    RESISTANCE;   
DOI  :  10.1038/28112
来源: SCIE
【 摘 要 】

Fabrication of structures at the atomic scale is now possible using state-of-the-art techniques for manipulating individual atoms(1), and it may become possible to design electrical circuits atom by atom. A prerequisite for successful design is a knowledge of the relationship between the macroscopic electrical characteristics of such circuits and the quantum properties of the individual atoms used as building blocks. As a first step, we show here that the chemical valence determines the conduction properties of the simplest imaginable circuit - a one-atom contact between two metallic banks. The extended quantum states that carry the current from one bank to the other necessarily proceed through the valence orbitals of the constriction atom. It thus seems reasonable to conjecture that the number of current-carrying modes (or 'channels') of a one-atom contact is determined by the number of available valence orbitals, and so should strongly differ for metallic elements in different series of the periodic table. We have tested this conjecture using scanning tunnelling microscopy and mechanically controllable break-junction techniques(2,3) to obtain atomic-size constrictions for four different metallic elements (Pb, Al, Nb and An), covering a broad range of valences and orbital structures. Our results demonstrate unambiguously a direct link between valence orbitals and the number of conduction channels in one-atom contacts.

【 授权许可】

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