High-kappa perovskite membranes as insulators for two-dimensional transistors

Article

关键词: HEXAGONAL BORON-NITRIDE;    ATOMIC LAYER DEPOSITION;    ELECTRONIC-STRUCTURE;    CRYSTALLINE OXIDES;    STRONTIUM-TITANATE;    GRAPHENE;    SRTIO3;    INTEGRATION;    SILICON;   

DOI  :  10.1038/s41586-022-04588-2

来源: SCIE

【 摘 要 】

The scaling of silicon metal-oxide-semiconductor field-effect transistors has followed Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre technology nodes introduces issues such as leakage currents(1). Two-dimensional (2D) layered semiconductors, with an atomic thickness that allows superior gate-field penetration, are of interest as channel materials for future transistors(2,3). However, the integration of high-dielectric-constant (kappa) materials with 2D materials, while scaling their capacitance equivalent thickness (CET), has proved challenging. Here we explore transferrable ultrahigh-kappa single-crystalline perovskite strontium-titanium-oxide membranes as a gate dielectric for 2D field-effect transistors. Our perovskite membranes exhibit a desirable sub-one-nanometre CET with a low leakage current (lessthan10(-2) amperes per square centimetre at 2.5 megavolts per centimetre). We find that the van der Waalsgap between strontium-titanium-oxide dielectrics and 2D semiconductors mitigates the unfavourable fringing-induced barrier-lowering effect resulting from the use of ultrahigh-kappa dielectrics(4). Typical short-channel transistors made of scalable molybdenum-disulfide films by chemical vapour deposition and strontium-titanium-oxide dielectrics exhibit steep subthreshold swings down to about 70 millivolts per decade and on/off current ratios up to 10(7), which matchesthe low-power specifications suggested by the latest International Roadmap for Devices and Systems(5).

【 授权许可】

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