A study of hydrogen plasma-induced charging effect in EUV lithography systems

Nanoscale Research Letters

Research

Yao-Hung Huang¹  Ya-Chin King¹  Chrong Jung Lin¹ 

[1] Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan;

关键词: Extreme ultraviolet (EUV);    Lithography;    EUV-induced hydrogen plasma;   

DOI  :  10.1186/s11671-023-03799-4

 received in 2022-11-22, accepted in 2023-02-09,  发布年份 2023

来源: Springer

【 摘 要 】

In the extreme ultraviolet lithography system, EUV-induced hydrogen plasma charging effect is observed by in situ embedded micro-detector array. The 4k-pixel on-wafer array can detect and store the distributions of H2 plasma in each in-pixel floating gate for non-destructive off-line read. The local uniformity of H2 plasma intensity extracted by the threshold voltages on an array and its distributions across a wafer by the average bit cell current of MDAs provide insights into the detailed conditions inside advanced EUV lithography chambers.

【 授权许可】

CC BY   
© The Author(s) 2023

【 图 表 】

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