Recovery of off-state stress-induced damage in FET-type gas sensor using self-curing method

Nanoscale Research Letters

Research

Jae-Joon Kim¹  Wonjun Shin¹  Yujeong Jeong¹  Ryun-Han Koo¹  Mingyu Kim¹  Jungsoo Lee¹  Gyuweon Jung¹  Jong-Ho Lee¹  Seongbin Hong¹ 

[1] Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 08826, Seoul, South Korea;

关键词: InO;    Horizontal floating-gate FET-type gas sensor;    f;    Low-frequency noise;    Self-curing;   

DOI  :  10.1186/s11671-023-03801-z

 received in 2022-10-14, accepted in 2023-02-11,  发布年份 2023

来源: Springer

【 摘 要 】

The need for high-performance gas sensors is driven by concerns over indoor and outdoor air quality, and industrial gas leaks. Due to their structural diversity, vast surface area, and geometric tunability, metal oxides show significant potential for the development of gas sensing systems. Despite the fact that several previous reports have successfully acquired a suitable response to various types of target gases, it remains difficult to maintain the reliability of metal oxide-based gas sensors. In particular, the degradation of the sensor platform under repetitive operation, such as off-state stress (OSS) causes significant reliability issues. We investigate the impact of OSS on the gas sensing performances, including response, low-frequency noise, and signal-to-noise ratio of horizontal floating-gate field-effect-transistor (FET)-type gas sensors. The 1/f noise is increased after the OSS is applied to the sensor because the gate oxide is damaged by hot holes. Therefore, the SNR of the sensor is degraded by the OSS. We applied a self-curing method based on a PN-junction forward current at the body–drain junction to repair the damaged gate oxide and improve the reliability of the sensor. It has been demonstrated that the SNR degradation caused by the OSS can be successfully recovered by the self-curing method.

【 授权许可】

CC BY   
© The Author(s) 2023

【 图 表 】

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