In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications

Nanoscale Research Letters

Da-Peng Xu¹  Qing-Qing Sun¹  Peng Zhou¹  Shi-Jin Ding¹  Lin Chen¹  Lin-Jie Yu¹  David Wei Zhang¹  Xu-Dong Chen¹  Hong-Liang Lu¹  Hao Zhu¹ 

[1] State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University;

关键词: Oxygen vacancies;    Band alignment;    In situ XPS;    UPS;    Ellipsometry;   

DOI  :  10.1186/s11671-017-2068-y

来源: DOAJ

【 摘 要 】

Abstract The density of oxygen vacancies characterization in high-k/metal gate is significant for semiconductor device fabrication. In this work, a new approach was demonstrated to detect the density of oxygen vacancies by in situ x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) measurement. Moreover, the band alignment of the structure with optical band gap measured by spectroscopic ellipsometry (SE) and valence band offset by UPS were reported. The specific areal density of oxygen vacancies in high-k dielectric of HfO2/TiN was obtained by fitting the experiment data to be 8.202 × 1010cm− 2. This study would provide an effective approach to characterize the oxygen vacancies based defects which cause threshold voltage shifts and enormous gate leakage in modern MOSFET devices.

【 授权许可】

Unknown