Silicon on isolator ribbon field-effect nanotransistors for high-sensitivity low-power biosensor

Journal of Engineering and Technological Sciences

Nikolay Masalsky¹ 

[1] PhD, leading researcher, Federal State institution "Federal Scientific Center Research Institute of System Researches of the RAS”;

关键词: biosensor;    I-V data;    low supply power;    ribbon field-effect nanotransistor;    silicon on isolator;    TCAD;   

DOI  :  10.5614/j.eng.technol.sci.2022.54.2.14

来源: DOAJ

【 摘 要 】

Silicon nanowire field-effect transistors are discussed as biological sensors due to their excellent sensitivity due to the large surface-to-volume ratio and high selectivity with respect to a large number of analytes. A miniature sensor based on a long-channel fin field-effect transistor as a surface charge detector is being investigated. The three-gate configuration offers undeniable advantages over planar devices, since the edges are about a hundred nanometers wide and are characterized by increased conductivity, which leads to higher sensitivity. The characteristics of the transistor are optimized using 3D modeling performed by the computer-aided design software package TCAD, depending on the topological parameters of the transistor and the level of control voltages. Based on the obtained simulation results, a chip was manufactured on a SOI substrate based on self-aligning CMOS-compatible technological processes from top to bottom. It is established that thin structures with a reduced level of doping and low supply power have promising electrical characteristics for an effective approach to scaling a high-resolution pH sensor, which is of particular interest to integrated pH bioanalytics based on CMOS technology.

【 授权许可】

Unknown