Spiral Waveguides on Germanium-on-Silicon Nitride Platform for Mid-IR Sensing Applications

IEEE Photonics Journal

Richard A. Soref¹  Kwang Hong Lee²  Hao Dong Qiu³  Xin Guo³  Wei Li³  Simon Chun Kiat Goh³  Lin Zhang³  P. Anantha³  Hong Wang³  Chuan Seng Tan³ 

[1] Department of Engineering, University of Massachusetts at Boston, Boston, MA, USA;Low Energy Electronic System, Singapore-MIT Alliance for Research and Technology, Singapore, Singapore;School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore;

关键词: Integrated optics devices;    integrated optics materials;    sensor;    waveguides;    absorption.;   

DOI  :  10.1109/JPHOT.2018.2829988

来源: DOAJ

【 摘 要 】

Spiral waveguides on a new germanium-on-silicon nitride (GON) platform with a wide transparency and a large core-clad index contrast for mid-infrared (mid-IR) sensing applications are demonstrated. Spiral waveguide sensors with a low bending loss on this platform enable compact sensors for mid-IR absorption spectroscopy. A minimum volumetric concentration of 5% isopropanol (IPA) in an IPA-acetone mixture is measured. This detection limit is three times lower than the counterpart waveguide, fabricated on the regular germanium-on-silicon platform with similar propagation loss at 3.73 μm wavelength. This silicon-compatible GON sensor is promising for applications such as environmental studies, industrial leak detection, process control, medical breath analysis, and many more.

【 授权许可】

Unknown