Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer

Crystals

Ki-Sik Im¹  Young-Min Hwang¹  Yeo-Jin Choi²  Jae-Seung Roh²  Jin-Seok Choi²  Sung-Jin An²  Jae-Hoon Lee³ 

[1] Advanced Material Research Center, Kumoh National Institute of Technology, Gumi 39177, Korea;Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea;Yield Enhancement Team, Foundry, Samsung Electronics Company Ltd., Yongin 17113, Korea;

关键词: AlGaN/GaN;    HEMTs;    cap layer;    low-frequency noise;    carrier number fluctuations;   

DOI  :  10.3390/cryst11050489

来源: DOAJ

【 摘 要 】

We investigated the effects of in situ silicon carbon nitride (SiCN) cap layer of AlGaN/GaN high-electron mobility transistors (HEMTs) on DC, capacitance-voltage (C-V) and low-frequency noise (LFN). The proposed device with SiCN cap layer exhibited enhanced drain current, reduced gate leakage current, low interface trap density (D_it), and high on/off ratio thanks to the passivation effect, compared to the device without SiCN cap layer. Both devices clearly showed 1/f noise behavior with carrier number fluctuations (CNF), regardless of the existence of SiCN cap layer. The proposed device presented the relative low trap density (N_it) and reduced access noise due to the effective surface passivation in source-drain access region compared to the device without SiCN cap layer. From the improved DC, C-V and noise results of the proposed device, the in situ SiCN cap layer plays an important role in the passivation layer and gate oxide layer in AlGaN/GaN HEMT.

【 授权许可】

Unknown