Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs)

Applied Sciences

MinWoo Kang¹  WooYoung Choi¹ 

[1] Department of Electronic Engineering, Sogang University, Seoul 04107, Korea;

关键词: hump behavior;    corner;    surface potential;    gate-normal nanowire tunnel field-effect transistor (NWTFET);   

DOI  :  10.3390/app10248880

来源: DOAJ

【 摘 要 】

The hump behavior of gate-normal nanowire tunnel field-effect transistors (NWTFETs) is investigated by using a three-dimensional technology computer-aided design (TCAD) simulation. The simulation results show that the hump behavior degrades the subthreshold swing (SS) and on-current (I_on) because the corners and sides of nanowires (NWs) have different surface potentials. The hump behavior can be successfully suppressed by increasing the radius of curvature (R) of NWs and reducing gate insulator thickness (T_ins).

【 授权许可】

Unknown