Use of a New Non-Pyrophoric Liquid Aluminum Precursor for Atomic Layer Deposition

Materials

Stefan Guldin¹  Alaric Taylor¹  Xueming Xia²  Chris Blackman²  Yifan Zhao³ 

[1] Department of Chemical Engineering, University College London, Torrington Place, London WC1E 7JE, UK;Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, UK;Department of Life Sciences, Imperial College London, South Kensington Campus, London SW7 2AZ, UK;

关键词: chemical vapor deposition;    atomic layer deposition;    aluminum oxide;    aluminum tri-sec-butoxide;    thin film;   

DOI  :  10.3390/ma12091429

来源: DOAJ

【 摘 要 】

An Al₂O₃ thin film has been grown by vapor deposition using different Al precursors. The most commonly used precursor is trimethylaluminum, which is highly reactive and pyrophoric. In the purpose of searching for a more ideal Al source, the non-pyrophoric aluminum tri-sec-butoxide ([Al(O^sBu)₃], ATSB) was introduced as a novel precursor for atomic layer deposition (ALD). After demonstrating the deposition of Al₂O₃ via chemical vapor deposition (CVD) and ‘pulsed CVD’ routes, the use of ATSB in an atomic layer deposition (ALD)-like process was investigated and optimized to achieve self-limiting growth. The films were characterized using spectral reflectance, ellipsometry and UV-Vis before their composition was studied. The growth rate of Al₂O₃ via the ALD-like process was consistently 0.12 nm/cycle on glass, silicon and quartz substrates under the optimized conditions. Scanning electron microscopy and transmission electron microscopy images of the ALD-deposited Al₂O₃ films deposited on complex nanostructures demonstrated the conformity, uniformity and good thickness control of these films, suggesting a potential of being used as the protection layer in photoelectrochemical water splitting.

【 授权许可】

Unknown